SK Keyfoundry Revolutionizes GaN Power Semiconductors

SK Keyfoundry, a prominent 8-inch pure-play foundry headquartered in South Korea, has recently unveiled significant progress in the realm of GaN (gallium nitride) power semiconductors. The company's primary objective is to finalize the GaN project by the year's end, with a strong focus on boosting power efficiency and cutting costs for end-users.

Having successfully attained key device characteristics for 650V GaN HEMT, SK Keyfoundry is poised to revolutionize multiple sectors such as fast charging adapters, LED lighting, data centers, ESS, and solar microinverters. Their strategic approach involves catering to both current and prospective clients keen on integrating GaN technology.

GaN semiconductors are renowned for their rapid switching capabilities and minimal ON resistance, delivering enhanced efficiency and compactness when compared to traditional silicon-based alternatives. Market forecasts suggest a substantial growth trajectory for GaN power semiconductors, with an estimated market size of $6.4 billion by 2032.

CEO of SK Keyfoundry, Derek D. Lee, underscored the company's dedication to broadening its power semiconductor portfolio to encompass GaN and SiC technologies. Leveraging their proficiency in Analog and Mixed-Signal foundry services, SK Keyfoundry aims to position itself as a specialized provider within the global semiconductor landscape.

SK Keyfoundry's strides in GaN power semiconductor development signify a promising future for energy-efficient and high-performance electronic devices across various industries. Their commitment to innovation and technological advancement underscores their position as a key player in shaping the semiconductor landscape.

For more information on SK Keyfoundry and its cutting-edge semiconductor solutions, please visit their official website at https://www.skkeyfoundry.com.